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1. product profile 1.1 general description a 600 w ldmos rf power transistor for transmitter applications and industrial applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. 1.2 features and benefits ? excellent ruggedness (vswr ? 40 : 1 through all phases) ? optimum thermal behavi or and reliability, r th(j-c) = 0.15 k/w ? high power gain ? high efficiency ? designed for broadband operation (400 mhz to 1000 mhz) ? internal input matching for high gain and optimum broadband operation ? excellent reliability ? easy power control ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? communication transmitter applications ? industrial applications BLF10H6600P; BLF10H6600Ps power ldmos transistor rev. 2 ? 20 june 2013 product data sheet table 1. application information test signal f p l(av) p l(m) g p ? d imd3 (mhz) (w) (w) (db) (%) (dbc) rf performance in a common source 860 mhz narrowband test circuit 2-tone, class-ab f 1 = 860; f 2 = 860.1 250 - 20.8 46 ? 32 pulsed, class-ab 860 - 600 19.8 58 -
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 2 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol BLF10H6600P (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF10H6600Ps (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF10H6600P - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a BLF10H6600Ps - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 3 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. [1] capacitance values without internal matching. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l(av) = 250 w [1] 0.15 k/w table 6. dc characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.4 ma [1] 110 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 240 ma [1] 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =50v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -36- a i gss gate leakage current v gs =10v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75 v; i d =8.5a [1] - 143 - m ? table 7. ac characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c iss input capacitance v gs = 0 v; v ds =50v; f=1mhz [1] -220- pf c oss output capacitance v gs = 0 v; v ds =50v; f=1mhz - 74 - pf c rss reverse transfer capacitance v gs = 0 v; v ds =50v; f=1mhz - 1.2 - pf table 8. rf characteristics rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit 2-tone, class-ab v ds drain-source voltage - 50 - v i dq quiescent drain current [1] -1.3-a p l(av) average output power f 1 =860mhz; f 2 = 860.1 mhz 250 - - w g p power gain f 1 =860mhz; f 2 = 860.1 mhz 19.8 20.8 - db ? d drain efficiency f 1 =860mhz; f 2 = 860.1 mhz 42 46 - % imd3 third-order intermodulation distortion f 1 =860mhz; f 2 = 860.1 mhz - ? 32 ? 28 dbc
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 4 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor [1] i dq for total device 7. test information 7.1 ruggedness in class-ab operation the BLF10H6600P and BLF10H6600Ps are capable of withstanding a load mismatch corresponding to vswr ? 40 : 1 through all phases under the following conditions: v ds =50v; i dq = 1.3 a; p l = 600 w (pulsed); f = 860 mhz. pulsed, class-ab v ds drain-source voltage - 50 - v i dq quiescent drain current [1] -1.3-a p l(m) peak output power f = 860 mhz - 600 - w g p power gain f = 860 mhz 17.2 19.8 - db ? d drain efficiency f = 860 mhz 54 58 - % t p pulse duration - 100 - ? s ? duty cycle - 20 - % v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section table 8. rf characteristics ?continued rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit 001aam579 v ds (v) 060 40 20 200 100 300 400 c oss (pf) 0
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 5 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 7.2 impedance information table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l(av) = 600 w (pulsed cw). see figure 2 for definition of transistor impedance. f z i z l mhz ? ? 300 0.607 + j0 5.495 + j1.936 325 0.622 ? j1.441 5.324 + j2.008 350 0.639 ? j1.121 5.151 + j2.065 375 0.658 ? j0.826 4.977 + j2.107 400 0.679 ? j0.551 4.805 + j2.136 425 0.703 ? j0.291 4.634 + j2.153 450 0.73 ? j0.044 4.466 + j2.157 475 0.76 + j0.194 4.301 + j2.151 500 0.793 + j0.424 4.14 + j2.134 525 0.83 + j0.648 3.984 + j2.109 550 0.872 + j0.869 3.833 + j2.075 575 0.919 + j1.088 3.687 + j2.033 600 0.972 + j1.305 3.546 + j1.985 625 1.032 + j1.523 3.411 + j1.931 650 1.101 + j1.741 3.281 + j1.871 675 1.179 + j1.963 3.156 + j1.807 700 1.268 + j2.187 3.036 + j1.738 725 1.371 + j2.416 2.922 + j1.666 750 1.49 + j2.651 2.813 + j1.591 775 1.629 + j2.891 2.708 + j1.512 800 1.792 + j3.138 2.609 + j1.432 825 1.984 + j3.39 2.514 + j1.349 850 2.212 + j3.649 2.423 + j1.264 875 2.484 + j3.91 2.336 + j1.178 900 2.812 + j4.17 2.254 + j1.091 925 3.209 + j4.421 2.175 + j1.003 950 3.689 + j4.648 2.1 + j0.913 975 4.27 + j4.829 2.029 + j0.823 1000 4.967 + j4.927 1.96 + j0.733
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 6 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 7.3 test circuit information fig 2. definition of transistor impedance 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l table 10. list of components for test circuit, see figure 3 , figure 4 and figure 5 . component description value remarks b1, b2 semi rigid coax 25 ? ; 49.5 mm ut-090c-25 (ez 90-25) c1 multilayer ceramic chip capacitor 12 pf [1] c2, c3, c4, c5, c6 multilayer ceramic chip capacitor 8.2 pf [1] c7 multilayer ceramic chip capacitor 6.8 pf [2] c8 multilayer ceramic chip capacitor 2.7 pf [2] c9 multilayer ceramic chip capacitor 2.2 pf [2] c10, c13, c14 multilayer ceramic chip capacitor 100 pf [3] c11, c12 multilayer cera mic chip capacitor 10 pf [2] c15, c16 multilayer cera mic chip capacitor 4.7 ? f, 50 v kemet c1210x475k5rac-tu or capacitor of same quality. c17, c18, c23, c24 multilayer ceramic chip capacitor 100 pf [2] c19, c20 multilayer ceramic chip capacitor 10 ? f, 50 v tdk c570x7r1h106kt000n or capacitor of same quality. c21, c22 electrolytic capacitor 470 ? f; 63 v c30 multilayer ceramic chip capacitor 10 pf [4] c31 multilayer ceramic chip capacitor 9.1 pf [4] c32 multilayer ceramic chip capacitor 3.9 pf [4] c33, c34, c35 multilayer ceramic chip capacitor 100 pf [4] c36, c37 multilayer cera mic chip capacitor 4.7 ? f, 50 v tdk c4532x7r1e475mt020u or capacitor of same quality. l1 microstrip - [5] (w ? l) 15 mm ? 13 mm l2 microstrip - [5] (w ? l) 5 mm ? 26 mm l3, l32 microstrip - [5] (w ? l) 2 mm ? 49.5 mm l4 microstrip - [5] (w ? l) 1.7 mm 3.5 mm l5 microstrip - [5] (w ? l) 2 mm ? 9.5 mm l30 microstrip - [5] (w ? l) 5 mm ? 13 mm l31 microstrip - [5] (w ? l) 2 mm ? 11 mm l33 microstrip - [5] (w ? l) 2 mm ? 3mm r1, r2 wire resistor 10 ?
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 7 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor [1] american technical ceramics type 800r or capacitor of same quality. [2] american technical ceramics type 800b or capacitor of same quality. [3] american technical ceramics type 180r or capacitor of same quality. [4] american technical ceramics type 100a or capacitor of same quality. [5] printed-circuit board (pcb): taconic rf35; ? r = 3.5 f/m; height = 0.762 mm; cu (top/bottom metallization); thickness copper plating = 35 ? m. r3, r4 smd resistor 5.6 ? 0805 r5, r6 wire resistor 100 ? r7, r8 potentiometer 10 k ? table 10. list of components ?continued for test circuit, see figure 3 , figure 4 and figure 5 . component description value remarks
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 8 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor see table 10 for a list of components. fig 3. class-ab common source broadband amplifier; v d1(test) , v d2(test) , v g1(test) and v g2(test) are drain and gate test voltages +v g1(test) +v d1(test) +v d2(test) c32 c31 c30 c19 c20 c15 c10 50 50 l4 c21 c22 c13 c16 c14 c9 c7c6 c4 c8 c5 c3 c2 c1 +v g2(test) l30 l1 l2 r1 l5 l31 c34 c36 c33 c37 l33 c35 l3 b1 r3 l32 b2 r4 r6 r8 r5 r7 c11 c12 c17 r2 c18 001aan763 c23 c24
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 9 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor see table 10 for a list of components. fig 4. printed-circuit board (pcb) for class-ab common source amplifier 50 mm 001aam588 105 mm l33 l32 l32 l31 l30 l30 l1 l5 l5 l1 l2 l2 l3 l3 l4 l31 see table 10 for a list of components. fig 5. component layout for class-ab common source amplifier - + - + 6.3 mm 4 mm +v g2(test) +v d2(test) +v d1(test) +v g1(test) 001aan764 r8 r7 r6 c37 c35 c34 c32 c30 c31 c36 c17 c19 c11 c12 c7 c9 c8 c1 c2 c3 c4 c5 c6 c21 c23 c24 c22 c20 c18 r2 c15 c13 c14 c16 r1 c33 50 c10 50 r4 r3 r5 49.6 mm 36.8 mm 26.3 mm 25.3 mm 44 mm
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 10 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 7.4 graphical data 7.4.1 pulsed v ds = 50 v; i dq = 1300 ma; f = 860 mhz; t p = 100 ? s; ? =20%. (1) p l(1db) = 57.6 dbm (575 w) (2) p l(3db) = 58.1 dbm (649 w) v ds = 50 v; f = 860 mhz; t p = 100 ? s; ? =20%. (1) i dq = 100 ma (2) i dq = 200 ma (3) i dq = 600 ma (4) i dq = 1000 ma (5) i dq = 1300 ma fig 6. output power as a function of input power; typical values fig 7. power gain as a function of output power; typical values 3 l g%p ddd 3 / g%p ,ghdo3 / 3 / ddd 3 / : * s * s g% g% g%
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 11 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor v ds = 50 v; f = 860 mhz; t p = 100 ? s; ? =20%. (1) i dq = 100 ma (2) i dq = 200 ma (3) i dq = 600 ma (4) i dq = 1000 ma (5) i dq = 1300 ma v ds = 50 v; i dq = 1300 ma; f = 860 mhz; t p = 100 ? s; ? =20%. fig 8. drain efficiency as a function of output power; typical values fig 9. power gain and drain efficiency as function of output power; typical values i dq = 1300 ma; f = 860 mhz; t p = 100 ? s; ? =20%. (1) v ds =50v (2) v ds =45v (3) v ds =40v (4) v ds =35v (5) v ds =30v i dq = 1300 ma; f = 860 mhz; t p = 100 ? s; ? =20%. (1) v ds =50v (2) v ds =45v (3) v ds =40v (4) v ds =35v (5) v ds =30v fig 10. power gain as a function of output power; typical values fig 11. drain efficiency as a function of output power; typical values ddd 3 / : ' ' ddd 3 / : * s * s g% g% g% ' ' * s * s ' ' ddd 3 / : * s * s g% g% g% ddd 3 / : ' '
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 12 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 7.4.2 2-tone cw v ds = 50 v; f 1 = 860.0 mhz; f 2 = 860.1 mhz. (1) i dq = 600 ma (2) i dq = 1000 ma (3) i dq = 1300 ma (4) i dq = 1600 ma (5) i dq = 2000 ma v ds =50v; i dq = 1300 ma; f 1 = 860.0 mhz; f 2 = 860.1 mhz. fig 12. third-order intermodulation distortion as a function of average output power; typical values fig 13. power gain and drain efficiency as function of average output power; typical values ddd 3 /$9 : ,0' ,0' ,0' g%f g%f g%f ddd 3 /$9 : * s * s g% g% g% ' ' * s * s ' '
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 13 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 8. package outline fig 14. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 12-05-02 10-02-02 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 14 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor fig 15. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 12-05-02 13-05-24 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ceramic pacage 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.39 32.13 u 2 w 2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 15 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description ccdf complementary cumulative distribution function cw continuous wave ldmos laterally diffused metal-oxide semiconductor smd surface mounted device vswr voltage standing-wave ratio table 12. revision history document id release date data sheet status change notice supersedes BLF10H6600P_BLF10H6600Ps v.2 20130620 product data sheet - blf0510h6600p v.1 modifications: ? this product has been renamed and now describes both the eared and earless versions: BLF10H6600P and BLF10H6600Ps ? table 1 on page 1 : table updated ? section 1.2 on page 1 : list item number 5, 500 mhz changed to 400 mhz ? table 2 on page 2 : table updated ? table 3 on page 2 : table updated ? table 4 on page 2 : table updated ? table 8 on page 3 : table updated ? section 7 on page 4 : section updated ? section 7.1 on page 4 : section added ? section 7.4 on page 10 : section added ? figure 15 on page 14 : figure added blf0510h6600p v.1 20121009 objective data sheet - -
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 16 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF10H6600P_BLF10H6600Ps all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 2 ? 20 june 2013 17 of 18 nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF10H6600P; BLF10H6600Ps power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 june 2013 document identifier: BLF10H6600P_BLF10H6600Ps please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 5 7.3 test circuit information . . . . . . . . . . . . . . . . . . . 6 7.4 graphical data . . . . . . . . . . . . . . . . . . . . . . . . 10 7.4.1 pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7.4.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 9 handling information. . . . . . . . . . . . . . . . . . . . 15 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 contact information. . . . . . . . . . . . . . . . . . . . . 17 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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